> E-Beam lithography <
- Minimum Line Width : Under 100nm Possible
> Resist Coating <
- Coating Thickness 100nm-100um
> Etching <
- Wafer Thickness : 30um-1mm
- Aspect ratio : Max. 1:30
- Etching rate : > 8um/min
- Selectivity : PR: >1:30, Sio2: >1:100
> Photo Mask Blank <
- Chrome Photo mask Blank
- Soda lime and Quartz Glass
- Large Size Blank for LCD, Packging&PCB
Industries
- 4 to 14" Soda lime Blank
- 5009,6009,6012,6025 Quartz G-line
LCD/Blank
- 6025 Quartz l-line Blank
> Patterning <
- Mask Size : 2.5"-8" mask
- Pattern Size : Minimum 1um Possible
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